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    IPD80R1K0CEBTMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 5.7A TO252-3
    IPD80R1K0CEBTMA1 Images
    IPD80R1K0CEBTMA1 Images
    Product Attributes：
  • Part Number: IPD80R1K0CEBTMA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 800V 5.7A TO252-3
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPD80R1K0CEBTMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPD80R1K0CEBTMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 800V 5.7A TO252-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: CoolMOS™
  • PartStatus: Discontinued at
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 800 V
  • Current-ContinuousDrain(Id)@25°C: 5.7A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 950mOhm @ 3.6A, 10V
  • Vgs(th)(Max)@Id: 3.9V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 31 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 785 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 83W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO252-3-11
  • IPD80R1K0CEBTMA1 | Infineon | NHE Electronics
    • IPD80R1K0CEBTMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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