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IPD80R2K8CEATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 1.9A TO252-3
Product Attributes：
Part Number: IPD80R2K8CEATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 800V 1.9A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD80R2K8CEATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD80R2K8CEATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 800V 1.9A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™ CEPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 1.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2.8Ohm @ 1.1A, 10VVgs(th)(Max)@Id: 3.9V @ 120µAGateCharge(Qg)(Max)@Vgs: 12 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 290 pF @ 100 VFETFeature: -PowerDissipation(Max): 42W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD80R2K8CEATMA1 | Infineon | NHE Electronics
IPD80R2K8CEATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
