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    IPDQ60R010S7XTMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, HIGH POWER_NEW PG-HDSOP-22
    IPDQ60R010S7XTMA1 Images
    IPDQ60R010S7XTMA1 Images
    Product Attributes：
  • Part Number: IPDQ60R010S7XTMA1
  • Manufacturer: Infineon
  • Description: HIGH POWER_NEW PG-HDSOP-22
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPDQ60R010S7XTMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPDQ60R010S7XTMA1
  • Mfr: Infineon Technologies
  • Description: HIGH POWER_NEW PG-HDSOP-22
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: CoolMOS™
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 600 V
  • Current-ContinuousDrain(Id)@25°C: 50A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 12V
  • RdsOn(Max)@IdVgs: 10mOhm @ 50A, 12V
  • Vgs(th)(Max)@Id: 4.5V @ 3.08mA
  • GateCharge(Qg)(Max)@Vgs: 318 nC @ 12 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 11987 pF @ 300 V
  • FETFeature: -
  • PowerDissipation(Max): 694W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-HDSOP-22-1
  • IPDQ60R010S7XTMA1 | Infineon | NHE Electronics
    • IPDQ60R010S7XTMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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