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IPG20N06S2L65ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 55V 20A TDSON-8-4
IPG20N06S2L65ATMA1 Images
IPG20N06S2L65ATMA1 Images
Product Attributes:
  • Part Number: IPG20N06S2L65ATMA1
  • Manufacturer: Infineon
  • Description: MOSFET 2N-CH 55V 20A TDSON-8-4
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • IPG20N06S2L65ATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: IPG20N06S2L65ATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET 2N-CH 55V 20A TDSON-8-4
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT),Bulk
  • Series: Automotive, AEC-Q101, OptiMOS™
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 55V
  • Current-ContinuousDrain(Id)@25°C: 20A
  • RdsOn(Max)@IdVgs: 65mOhm @ 15A, 10V
  • Vgs(th)(Max)@Id: 2V @ 14µA
  • GateCharge(Qg)(Max)@Vgs: 12nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: 410pF @ 25V
  • Power-Max: 43W
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-PowerVDFN
  • IPG20N06S2L65ATMA1 | Infineon | NHE Electronics
  • IPG20N06S2L65ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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