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IPG20N06S4L11ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 8TDSON
IPG20N06S4L11ATMA1 Images
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Product Specifications:
MfrPart.: IPG20N06S4L11ATMA1Mfr: Infineon TechnologiesDescription: MOSFET 2N-CH 8TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, OptiMOS™PartStatus: ActiveFETType: 2 N-Channel (Dual)FETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 60VCurrent-ContinuousDrain(Id)@25°C: 20ARdsOn(Max)@IdVgs: 11.2mOhm @ 17A, 10VVgs(th)(Max)@Id: 2.2V @ 28µAGateCharge(Qg)(Max)@Vgs: 53nC @ 10VInputCapacitance(Ciss)(Max)@Vds: 4020pF @ 25VPower-Max: 65WOperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountPackage/Case: 8-PowerVDFNIPG20N06S4L11ATMA1 | Infineon | NHE Electronics
IPG20N06S4L11ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.