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IPG20N10S4L35AATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 100V 20A 8TDSON
IPG20N10S4L35AATMA1 Images
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Product Specifications:
MfrPart.: IPG20N10S4L35AATMA1Mfr: Infineon TechnologiesDescription: MOSFET 2N-CH 100V 20A 8TDSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR)Series: Automotive, AEC-Q101, OptiMOS™PartStatus: ActiveFETType: 2 N-Channel (Dual)FETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 100VCurrent-ContinuousDrain(Id)@25°C: 20ARdsOn(Max)@IdVgs: 35mOhm @ 17A, 10VVgs(th)(Max)@Id: 2.1V @ 16µAGateCharge(Qg)(Max)@Vgs: 17.4nC @ 10VInputCapacitance(Ciss)(Max)@Vds: 1105pF @ 25VPower-Max: 43WOperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountPackage/Case: 8-PowerVDFNIPG20N10S4L35AATMA1 | Infineon | NHE Electronics
IPG20N10S4L35AATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.