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    IPG20N10S4L35ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 8TDSON
    IPG20N10S4L35ATMA1 Images
    IPG20N10S4L35ATMA1 Images
    Product Attributes：
  • Part Number: IPG20N10S4L35ATMA1
  • Manufacturer: Infineon
  • Description: MOSFET 2N-CH 8TDSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • IPG20N10S4L35ATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPG20N10S4L35ATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET 2N-CH 8TDSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: Automotive, AEC-Q101, OptiMOS™
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 100V
  • Current-ContinuousDrain(Id)@25°C: 20A
  • RdsOn(Max)@IdVgs: 35mOhm @ 17A, 10V
  • Vgs(th)(Max)@Id: 2.1V @ 16µA
  • GateCharge(Qg)(Max)@Vgs: 17.4nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: 1105pF @ 25V
  • Power-Max: 43W
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-PowerVDFN
  • IPG20N10S4L35ATMA1 | Infineon | NHE Electronics
    • IPG20N10S4L35ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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