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IPI072N10N3GXKSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 80A TO262-3
Product Attributes：
Part Number: IPI072N10N3GXKSA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 80A TO262-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPI072N10N3GXKSA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPI072N10N3GXKSA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 80A TO262-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: OptiMOS™PartStatus: Not For New DesignsFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 80A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 7.2mOhm @ 80A, 10VVgs(th)(Max)@Id: 3.5V @ 90µAGateCharge(Qg)(Max)@Vgs: 68 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4910 pF @ 50 VFETFeature: -PowerDissipation(Max): 150W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: PG-TO262-3IPI072N10N3GXKSA1 | Infineon | NHE Electronics
IPI072N10N3GXKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
