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IPI111N15N3GAKSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 150V 83A TO262-3
Product Attributes：
Part Number: IPI111N15N3GAKSA1
Manufacturer: Infineon
Description: MOSFET N-CH 150V 83A TO262-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPI111N15N3GAKSA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPI111N15N3GAKSA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 150V 83A TO262-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 83A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 8V, 10VRdsOn(Max)@IdVgs: 11.1mOhm @ 83A, 10VVgs(th)(Max)@Id: 4V @ 160µAGateCharge(Qg)(Max)@Vgs: 55 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3230 pF @ 75 VFETFeature: -PowerDissipation(Max): 214W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: PG-TO262-3IPI111N15N3GAKSA1 | Infineon | NHE Electronics
IPI111N15N3GAKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
