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IPI12CNE8N G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 85V 67A TO262-3
Product Attributes:
Part Number: IPI12CNE8N G
Manufacturer: Infineon
Description: MOSFET N-CH 85V 67A TO262-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPI12CNE8N G Datasheet (PDF)
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Product Specifications:
MfrPart.: IPI12CNE8N GMfr: Infineon TechnologiesDescription: MOSFET N-CH 85V 67A TO262-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 85 VCurrent-ContinuousDrain(Id)@25°C: 67A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 12.6mOhm @ 67A, 10VVgs(th)(Max)@Id: 4V @ 83µAGateCharge(Qg)(Max)@Vgs: 64 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4340 pF @ 40 VFETFeature: -PowerDissipation(Max): 125W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: PG-TO262-3IPI12CNE8N G | Infineon | NHE Electronics
IPI12CNE8N G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.