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IPI26CN10N G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 35A TO262-3
Product Attributes：
Part Number: IPI26CN10N G
Manufacturer: Infineon
Description: MOSFET N-CH 100V 35A TO262-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPI26CN10N G Datasheet (PDF)
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Product Specifications：
MfrPart.: IPI26CN10N GMfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 35A TO262-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 26mOhm @ 35A, 10VVgs(th)(Max)@Id: 4V @ 39µAGateCharge(Qg)(Max)@Vgs: 31 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2070 pF @ 50 VFETFeature: -PowerDissipation(Max): 71W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: PG-TO262-3IPI26CN10N G | Infineon | NHE Electronics
IPI26CN10N G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
