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    IPI65R099C6XKSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 38A TO262-3
    IPI65R099C6XKSA1 Images
    IPI65R099C6XKSA1 Images
    Product Attributes：
  • Part Number: IPI65R099C6XKSA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 650V 38A TO262-3
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPI65R099C6XKSA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPI65R099C6XKSA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 650V 38A TO262-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: CoolMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 650 V
  • Current-ContinuousDrain(Id)@25°C: 38A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 99mOhm @ 12.8A, 10V
  • Vgs(th)(Max)@Id: 3.5V @ 1.2mA
  • GateCharge(Qg)(Max)@Vgs: 127 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 2780 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 278W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: PG-TO262-3-1
  • IPI65R099C6XKSA1 | Infineon | NHE Electronics
    • IPI65R099C6XKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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