Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
IPN80R2K0P7ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CHANNEL 800V 3A SOT223
Product Attributes：
Part Number: IPN80R2K0P7ATMA1
Manufacturer: Infineon
Description: MOSFET N-CHANNEL 800V 3A SOT223
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPN80R2K0P7ATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
IC FLASH 1GBIT SPI/QUAD 24BGA
STANDARD SRAM, 64KX16, 55NS
IC MCU 8BIT 16KB MROM 64LQFP
IRFB4020 - 12V-300V N-CHANNEL PO
IC SRAM 18MBIT PARALLEL 100TQFP
IC FLASH 4GBIT PARALLEL 63BGA
Product Specifications：
MfrPart.: IPN80R2K0P7ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CHANNEL 800V 3A SOT223Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™ P7PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2Ohm @ 940mA, 10VVgs(th)(Max)@Id: 3.5V @ 50µAGateCharge(Qg)(Max)@Vgs: 9 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 175 pF @ 500 VFETFeature: -PowerDissipation(Max): 6W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-SOT223IPN80R2K0P7ATMA1 | Infineon | NHE Electronics
IPN80R2K0P7ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
