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IPN80R3K3P7ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 1.9A SOT223
Product Attributes：
Part Number: IPN80R3K3P7ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 800V 1.9A SOT223
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPN80R3K3P7ATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPN80R3K3P7ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 800V 1.9A SOT223Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™ P7PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 1.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 3.3Ohm @ 590mA, 10VVgs(th)(Max)@Id: 3.5V @ 30µAGateCharge(Qg)(Max)@Vgs: 5.8 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 120 pF @ 500 VFETFeature: -PowerDissipation(Max): 6.1W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-SOT223IPN80R3K3P7ATMA1 | Infineon | NHE Electronics
IPN80R3K3P7ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
