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IPP086N10N3GXKSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 80A TO220-3
Product Attributes：
Part Number: IPP086N10N3GXKSA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 80A TO220-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPP086N10N3GXKSA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPP086N10N3GXKSA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 80A TO220-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 80A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 8.6mOhm @ 73A, 10VVgs(th)(Max)@Id: 3.5V @ 75µAGateCharge(Qg)(Max)@Vgs: 55 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3980 pF @ 50 VFETFeature: -PowerDissipation(Max): 125W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: PG-TO220-3IPP086N10N3GXKSA1 | Infineon | NHE Electronics
IPP086N10N3GXKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
