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IPT026N10N5ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 27A/202A 8HSOF
Product Attributes：
Part Number: IPT026N10N5ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPT026N10N5ATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPT026N10N5ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 27A/202A 8HSOFProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™5PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 27A (Ta), 202A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 2.6mOhm @ 150A, 10VVgs(th)(Max)@Id: 3.8V @ 158µAGateCharge(Qg)(Max)@Vgs: 120 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 8800 pF @ 50 VFETFeature: -PowerDissipation(Max): 214W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-HSOF-8-1IPT026N10N5ATMA1 | Infineon | NHE Electronics
IPT026N10N5ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
