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IRF6662TR1PBF, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 8.3A DIRECTFET
IRF6662TR1PBF Images
IRF6662TR1PBF Images
Product Attributes:
  • Part Number: IRF6662TR1PBF
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 100V 8.3A DIRECTFET
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IRF6662TR1PBF Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: IRF6662TR1PBF
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 100V 8.3A DIRECTFET
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: HEXFET®
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 8.3A (Ta), 47A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 22mOhm @ 8.2A, 10V
  • Vgs(th)(Max)@Id: 4.9V @ 100µA
  • GateCharge(Qg)(Max)@Vgs: 31 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1360 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 2.8W (Ta), 89W (Tc)
  • OperatingTemperature: -40°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: DIRECTFET™ MZ
  • IRF6662TR1PBF | Infineon | NHE Electronics
  • IRF6662TR1PBF were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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