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SPB10N10 G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 10.3A TO263-3
Product Attributes：
Part Number: SPB10N10 G
Manufacturer: Infineon
Description: MOSFET N-CH 100V 10.3A TO263-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SPB10N10 G Datasheet (PDF)
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Product Specifications：
MfrPart.: SPB10N10 GMfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 10.3A TO263-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: SIPMOS®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 10.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 170mOhm @ 7.8A, 10VVgs(th)(Max)@Id: 4V @ 21µAGateCharge(Qg)(Max)@Vgs: 19.4 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 426 pF @ 25 VFETFeature: -PowerDissipation(Max): 50W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3-2SPB10N10 G | Infineon | NHE Electronics
SPB10N10 G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
