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    IPD50N04S308ATMA1, International Rectifier, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, OPTLMOS N-CHANNEL POWER MOSFET
    IPD50N04S308ATMA1 Images
    IPD50N04S308ATMA1 Images
    Product Attributes：
  • Part Number: IPD50N04S308ATMA1
  • Manufacturer: International Rectifier ( Now International Rectifier is part of Infineon )
  • Description: OPTLMOS N-CHANNEL POWER MOSFET
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPD50N04S308ATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPD50N04S308ATMA1
  • Mfr: International Rectifier (Now part of Infineon Technologies)
  • Description: OPTLMOS N-CHANNEL POWER MOSFET
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Bulk
  • Series: OptiMOS™
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 40 V
  • Current-ContinuousDrain(Id)@25°C: 50A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 7.5mOhm @ 50A, 10V
  • Vgs(th)(Max)@Id: 4V @ 40µA
  • GateCharge(Qg)(Max)@Vgs: 35 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 2.35 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 68W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO252-3
  • IPD50N04S308ATMA1 | International Rectifier | NHE Electronics
    • IPD50N04S308ATMA1 were obtained directly from authorized International Rectifier distributors and other trusted sources throughout the world.
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