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IRG8P15N120KD-EPBF, International Rectifier, Discrete Semiconductor Products~Transistors - IGBTs - Single, IRG8P15N120 - DISCRETE IGBT WITH
IRG8P15N120KD-EPBF Images
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INSULATED GATE BIPOLAR TRANSISTO
Product Specifications:
MfrPart.: IRG8P15N120KD-EPBFMfr: International Rectifier (Now part of Infineon Technologies)Description: IRG8P15N120 - DISCRETE IGBT WITHProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: BulkSeries: -PartStatus: ObsoleteIGBTType: -Voltage-CollectorEmitterBreakdown(Max): 1.2 kVCurrent-Collector(Ic)(Max): 30 ACurrent-CollectorPulsed(Icm): 30 AVce(on)(Max)@VgeIc: 2V @ 15V, 10APower-Max: 125 WSwitchingEnergy: 600µJ (on), 600µJ (off)InputType: StandardGateCharge: 98 nCTd(on/off)@25°C: 15ns/170nsTestCondition: 600V, 10A, 10Ohm, 15VReverseRecoveryTime(trr): 60 nsOperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Through HolePackage/Case: TO-247-3IRG8P15N120KD-EPBF | International Rectifier | NHE Electronics
IRG8P15N120KD-EPBF were obtained directly from authorized International Rectifier distributors and other trusted sources throughout the world.