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APT25GP90BDQ1G, Microchip Technology, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 900V 72A 417W TO247
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MEMS OSC XO 2.25V-3.6V 6VDFN
TVS DIODE 136.8VWM 245.7VC AXIAL
Product Specifications:
MfrPart.: APT25GP90BDQ1GMfr: Microchip TechnologyDescription: IGBT 900V 72A 417W TO247Product Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: POWER MOS 7®PartStatus: ActiveIGBTType: PTVoltage-CollectorEmitterBreakdown(Max): 900 VCurrent-Collector(Ic)(Max): 72 ACurrent-CollectorPulsed(Icm): 110 AVce(on)(Max)@VgeIc: 3.9V @ 15V, 25APower-Max: 417 WSwitchingEnergy: 370µJ (off)InputType: StandardGateCharge: 110 nCTd(on/off)@25°C: 13ns/55nsTestCondition: 600V, 40A, 4.3Ohm, 15VReverseRecoveryTime(trr): -OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HolePackage/Case: TO-247-3APT25GP90BDQ1G | Microchip Technology | NHE Electronics
APT25GP90BDQ1G were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.