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APT35GP120B2D2G, Microchip Technology, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT PT COMBI 1200V 35A TO-247
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Product Specifications:
MfrPart.: APT35GP120B2D2GMfr: Microchip TechnologyDescription: IGBT PT COMBI 1200V 35A TO-247Product Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: POWER MOS 7®PartStatus: ActiveIGBTType: PTVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 96 ACurrent-CollectorPulsed(Icm): 140 AVce(on)(Max)@VgeIc: 3.9V @ 15V, 35APower-Max: 540 WSwitchingEnergy: 1mJ (on), 1.185mJ (off)InputType: StandardGateCharge: 150 nCTd(on/off)@25°C: 14ns, 99nsTestCondition: 800V, 35A, 5Ohm, 15VReverseRecoveryTime(trr): 85 nsOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HolePackage/Case: TO-247-3 VariantAPT35GP120B2D2G | Microchip Technology | NHE Electronics
APT35GP120B2D2G were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.