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APT45GP120B2DQ2G, Microchip Technology, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1200V 113A 625W TMAX
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Product Specifications:
MfrPart.: APT45GP120B2DQ2GMfr: Microchip TechnologyDescription: IGBT 1200V 113A 625W TMAXProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: POWER MOS 7®PartStatus: ActiveIGBTType: PTVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 113 ACurrent-CollectorPulsed(Icm): 170 AVce(on)(Max)@VgeIc: 3.9V @ 15V, 45APower-Max: 625 WSwitchingEnergy: 900µJ (on), 905µJ (off)InputType: StandardGateCharge: 185 nCTd(on/off)@25°C: 18ns/100nsTestCondition: 600V, 45A, 5Ohm, 15VReverseRecoveryTime(trr): -OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HolePackage/Case: TO-247-3 VariantAPT45GP120B2DQ2G | Microchip Technology | NHE Electronics
APT45GP120B2DQ2G were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.