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JAN1N5417US, Microchip Technology, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 200V 3A B-MELF
Product Attributes:
Part Number: JAN1N5417US
Manufacturer: Microchip Technology
Description: DIODE GEN PURP 200V 3A B-MELF
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
JAN1N5417US Datasheet (PDF)
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Product Specifications:
Manufacturer Product Number: JAN1N5417USMfr: Microchip TechnologyDetailed Description: DIODE GEN PURP 200V 3A B-MELFProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: BulkSeries: Military, MIL-PRF-19500/411Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 200 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 150 nsCurrent - Reverse Leakage @ Vr: 1 µA @ 200 VCapacitance @ Vr, F: -Mounting Type: Surface MountPackage / Case: SQ-MELF, BOperating Temperature - Junction: -65°C ~ 175°CJAN1N5417US | Microchip Technology | NHE Electronics
JAN1N5417US were obtained directly from authorized Microchip Technology distributors and other trusted sources throughout the world.