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JAN1N5807US, Microchip Technology, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 50V 6A B-MELF
Product Attributes:
Part Number: JAN1N5807US
Manufacturer: Microchip Technology
Description: DIODE GEN PURP 50V 6A B-MELF
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
JAN1N5807US Datasheet (PDF)
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Product Specifications:
Manufacturer Product Number: JAN1N5807USMfr: Microchip TechnologyDetailed Description: DIODE GEN PURP 50V 6A B-MELFProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: BulkSeries: Military, MIL-PRF-19500/477Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 50 VCurrent - Average Rectified (Io): 6AVoltage - Forward (Vf) (Max) @ If: 875 mV @ 4 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 30 nsCurrent - Reverse Leakage @ Vr: 5 µA @ 50 VCapacitance @ Vr, F: 60pF @ 10V, 1MHzMounting Type: Surface MountPackage / Case: SQ-MELF, BOperating Temperature - Junction: -65°C ~ 175°CJAN1N5807US | Microchip Technology | NHE Electronics
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