Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
MT29E3T08EUHBBM4-3ES:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 3TB PARALLEL 333MHZ
MT29E3T08EUHBBM4-3ES:B TR Images
IC DRAM 64MBIT PAR 54TSOP II
IC FLASH 4GBIT PARALLEL 63VFBGA
IC FLASH 512GBIT MMC 169LFBGA
IC FLSH 128MBIT SPI 108MHZ 8VDFN
IC DRAM 8GBIT 1600MHZ FBGA
IC FLASH 16MBIT SPI 75MHZ 8VDFPN
Product Specifications:
MfrPart.: MT29E3T08EUHBBM4-3ES:B TRMfr: Micron Technology Inc.Description: IC FLASH 3TB PARALLEL 333MHZProduct Category: Integrated Circuits (ICs)~MemoryPackage: Tape & Reel (TR)Series: -PartStatus: ActiveMemoryType: Non-VolatileMemoryFormat: FLASHTechnology: FLASH - NANDMemorySize: 3Tb (384G x 8)MemoryInterface: ParallelClockFrequency: 333 MHzWriteCycleTime-WordPage: -AccessTime: -Voltage-Supply: 2.5V ~ 3.6VOperatingTemperature: 0°C ~ 70°C (TA)MountingType: -Package/Case: -MT29E3T08EUHBBM4-3ES:B TR | Micron Technology | NHE Electronics
MT29E3T08EUHBBM4-3ES:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.