MT29E3T08EUHBBM4-3ES:B TR | Micron Technology

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MT29E3T08EUHBBM4-3ES:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 3TB PARALLEL 333MHZ

MT29E3T08EUHBBM4-3ES:B TR Images

Product Attributes：

Part Number: MT29E3T08EUHBBM4-3ES:B TR

Manufacturer: Micron Technology

Description: IC FLASH 3TB PARALLEL 333MHZ

Category: Integrated Circuits (ICs)~Memory

MT29E3T08EUHBBM4-3ES:B TR Datasheet (PDF)

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Product Specifications：

MfrPart.: MT29E3T08EUHBBM4-3ES:B TR

Mfr: Micron Technology Inc.

Description: IC FLASH 3TB PARALLEL 333MHZ

Product Category: Integrated Circuits (ICs)~Memory

Package: Tape & Reel (TR)

Series: -

PartStatus: Active

MemoryType: Non-Volatile

MemoryFormat: FLASH

Technology: FLASH - NAND

MemorySize: 3Tb (384G x 8)

MemoryInterface: Parallel

ClockFrequency: 333 MHz

WriteCycleTime-WordPage: -

AccessTime: -

Voltage-Supply: 2.5V ~ 3.6V

OperatingTemperature: 0°C ~ 70°C (TA)

MountingType: -

Package/Case: -

MT29E3T08EUHBBM4-3ES:B TR | Micron Technology | NHE Electronics

MT29E3T08EUHBBM4-3ES:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.

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