MT29F3T08EUCBBM4-37:B TR | Micron Technology

Industry Leading Semiconductor Distributor

Your Reliable and Professional Sourcing Partner

Home

About NHE Electronics

MT29F3T08EUCBBM4-37:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 3TB PARALLEL 267MHZ

MT29F3T08EUCBBM4-37:B TR Images

Product Attributes：

Part Number: MT29F3T08EUCBBM4-37:B TR

Manufacturer: Micron Technology

Description: IC FLASH 3TB PARALLEL 267MHZ

Category: Integrated Circuits (ICs)~Memory

MT29F3T08EUCBBM4-37:B TR Datasheet (PDF)

Order with confidence, there are no lead times for in-stock products.

For Micron Technology, you may also be interested in the following:

MT53B256M32D1DS-062 AAT:C

IC DRAM 8GBIT 1600MHZ 200WFBGA

MT29C4G96MAYAPCMJ-5 IT

IC FLASH RAM 4GBIT PAR 200MHZ

MT29F64G08CBCGBL04A3WC1-R

IC FLASH 64GBIT PARALLEL DIE

MT49H16M18BM-5:B TR

IC DRAM 288MBIT PARALLEL 144UBGA

MT53B256M64D2NH-062 WT:B TR

IC DRAM 16GBIT 1600MHZ FBGA

M25P64-VMF6G

IC FLASH 64MBIT SPI 50MHZ 16SO W

Product Specifications：

MfrPart.: MT29F3T08EUCBBM4-37:B TR

Mfr: Micron Technology Inc.

Description: IC FLASH 3TB PARALLEL 267MHZ

Product Category: Integrated Circuits (ICs)~Memory

Package: Tape & Reel (TR)

Series: -

PartStatus: Active

MemoryType: Non-Volatile

MemoryFormat: FLASH

Technology: FLASH - NAND

MemorySize: 3Tb (384G x 8)

MemoryInterface: Parallel

ClockFrequency: 267 MHz

WriteCycleTime-WordPage: -

AccessTime: -

Voltage-Supply: 2.7V ~ 3.6V

OperatingTemperature: 0°C ~ 70°C (TA)

MountingType: -

Package/Case: -

MT29F3T08EUCBBM4-37:B TR | Micron Technology | NHE Electronics

MT29F3T08EUCBBM4-37:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.

ELECTRONIC COMPONENTS DISTRIBUTOR | NHE Electronics is committed to always being one of our customers' favorite suppliers.