MT29F4T08EYCBBG9-37ES:B TR | Micron Technology

Industry Leading Semiconductor Distributor

Your Reliable and Professional Sourcing Partner

Home

About NHE Electronics

MT29F4T08EYCBBG9-37ES:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC FLASH 4TB PARALLEL 267MHZ

MT29F4T08EYCBBG9-37ES:B TR Images

Product Attributes：

Part Number: MT29F4T08EYCBBG9-37ES:B TR

Manufacturer: Micron Technology

Description: IC FLASH 4TB PARALLEL 267MHZ

Category: Integrated Circuits (ICs)~Memory

MT29F4T08EYCBBG9-37ES:B TR Datasheet (PDF)

Order with confidence, there are no lead times for in-stock products.

For Micron Technology, you may also be interested in the following:

MT44K32M18RB-125E IT:A

IC DRAM 576MBIT PARALLEL 168BGA

M25PE80-VMN6TP TR

IC FLASH 8MBIT SPI 75MHZ 8SO

MT29F64G08CBEBBL84A3WC1

MLC 64G DIE 8GX8

MT53D1024M32D4NQ-046 AAT:D TR

IC DRAM 32GBIT 2133MHZ 200VFBGA

MT25QU256ABA1ESF-0SIT TR

IC FLASH 256MBIT SPI 133MHZ 16SO

MT46H256M32L4JV-6 IT:A

IC DRAM 8GBIT PARALLEL 168VFBGA

Product Specifications：

MfrPart.: MT29F4T08EYCBBG9-37ES:B TR

Mfr: Micron Technology Inc.

Description: IC FLASH 4TB PARALLEL 267MHZ

Product Category: Integrated Circuits (ICs)~Memory

Package: Tape & Reel (TR)

Series: -

PartStatus: Active

MemoryType: Non-Volatile

MemoryFormat: FLASH

Technology: FLASH - NAND

MemorySize: 4Tb (512G x 8)

MemoryInterface: Parallel

ClockFrequency: 267 MHz

WriteCycleTime-WordPage: -

AccessTime: -

Voltage-Supply: 2.7V ~ 3.6V

OperatingTemperature: 0°C ~ 70°C (TA)

MountingType: -

Package/Case: -

MT29F4T08EYCBBG9-37ES:B TR | Micron Technology | NHE Electronics

MT29F4T08EYCBBG9-37ES:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.

ELECTRONIC COMPONENTS DISTRIBUTOR | NHE Electronics is committed to always being one of our customers' favorite suppliers.