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MT53E256M32D2DS-046 AAT:B TR, Micron Technology, Integrated Circuits (ICs)~Memory, IC DRAM 8GBIT 2.133GHZ 200WFBGA
MT53E256M32D2DS-046 AAT:B TR Images
IC DRAM 4GBIT PARALLEL 134FBGA
IC PSRAM 16MBIT PARALLEL 54VFBGA
IC FLASH 8MBIT PARALLEL 48TSOP I
SRAM SYNC QUAD 2M-BIT 64KX32
IC DRAM 4GBIT PARALLEL 63FBGA
IC FLASH 4GBIT PARALLEL 63VFBGA
Product Specifications:
MfrPart.: MT53E256M32D2DS-046 AAT:B TRMfr: Micron Technology Inc.Description: IC DRAM 8GBIT 2.133GHZ 200WFBGAProduct Category: Integrated Circuits (ICs)~MemoryPackage: Tape & Reel (TR)Series: Automotive, AEC-Q100PartStatus: ActiveMemoryType: VolatileMemoryFormat: DRAMTechnology: SDRAM - Mobile LPDDR4MemorySize: 8Gb (256M x 32)MemoryInterface: -ClockFrequency: 2.133 GHzWriteCycleTime-WordPage: -AccessTime: -Voltage-Supply: 1.1VOperatingTemperature: -40°C ~ 105°C (TC)MountingType: Surface MountPackage/Case: 200-WFBGAMT53E256M32D2DS-046 AAT:B TR | Micron Technology | NHE Electronics
MT53E256M32D2DS-046 AAT:B TR were obtained directly from authorized Micron Technology distributors and other trusted sources throughout the world.