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1N5809US, Microsemi, Diodes, Rectifiers - Single, DIODE GEN PURP 100V 3A B-MELF
Product Attributes：
Part Number: 1N5809US
Manufacturer: Microsemi ( Now Microsemi is part of Microchip )
Description: DIODE GEN PURP 100V 3A B-MELF
Category: Diodes, Rectifiers - Single
1N5809US Datasheet (PDF)
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Product Specifications：
Manufacturer Part Number : 1N5809USManufacturer : Microsemi Commercial Components GroupDescription : DIODE GEN PURP 100V 3A B-MELFSeries : -Diode Type : StandardVoltage - DC Reverse (Vr) (Max) : 100VCurrent - Average Rectified (Io) : 3AVoltage - Forward (Vf) (Max) @ If : 875mV @ 4ASpeed : Fast Recovery = 200mA (Io)Reverse Recovery Time (trr) : 30nsCurrent - Reverse Leakage @ Vr : 5µA @ 100VCapacitance @ Vr, F : 60pF @ 10V, 1MHzMounting Type : Surface MountPackage / Case : SQ-MELF, BSupplier Device Package : B, SQ-MELFOperating Temperature - Junction : -65°C ~ 175°C1N5809US | Microsemi | NHE Electronics
1N5809US were obtained directly from authorized Microsemi distributors and other trusted sources throughout the world.
