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    JAN1N5809US, Microsemi, Diodes, Rectifiers - Single, DIODE GEN PURP 100V 6A B-MELF
    JAN1N5809US Images
    JAN1N5809US Images
    Product Attributes：
  • Part Number: JAN1N5809US
  • Manufacturer: Microsemi ( Now Microsemi is part of Microchip )
  • Description: DIODE GEN PURP 100V 6A B-MELF
  • Category: Diodes, Rectifiers - Single
  • JAN1N5809US Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • Manufacturer Part Number : JAN1N5809US
  • Manufacturer : Microsemi HI-REL [MIL]
  • Description : DIODE GEN PURP 100V 6A B-MELF
  • Series : Military, MIL-PRF-19500/477
  • Diode Type : Standard
  • Voltage - DC Reverse (Vr) (Max) : 100V
  • Current - Average Rectified (Io) : 6A
  • Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A
  • Speed : Fast Recovery = 200mA (Io)
  • Reverse Recovery Time (trr) : 30ns
  • Current - Reverse Leakage @ Vr : 5µA @ 100V
  • Capacitance @ Vr, F : 60pF @ 10V, 1MHz
  • Mounting Type : Surface Mount
  • Package / Case : SQ-MELF, B
  • Supplier Device Package : B, SQ-MELF
  • Operating Temperature - Junction : -65°C ~ 175°C
  • JAN1N5809US | Microsemi | NHE Electronics
    • JAN1N5809US were obtained directly from authorized Microsemi distributors and other trusted sources throughout the world.
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