BLA6G1011L-200RG112 | NXP Semiconductors

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BLA6G1011L-200RG112, NXP Semiconductors, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, POWER LDMOS TRANSISTOR, SOT502 (

BLA6G1011L-200RG112 Images

Product Attributes：

Part Number: BLA6G1011L-200RG112

Manufacturer: NXP Semiconductors

Description: POWER LDMOS TRANSISTOR, SOT502 (

Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single

BLA6G1011L-200RG112 Datasheet (PDF)

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Product Specifications：

MfrPart.: BLA6G1011L-200RG112

Mfr: NXP USA Inc.

Description: POWER LDMOS TRANSISTOR, SOT502 (

Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single

Package: Bulk

Series: *

PartStatus: Active

TransistorType: -

Current-Collector(Ic)(Max): -

Voltage-CollectorEmitterBreakdown(Max): -

VceSaturation(Max)@IbIc: -

Current-CollectorCutoff(Max): -

DCCurrentGain(hFE)(Min)@IcVce: -

Power-Max: -

Frequency-Transition: -

OperatingTemperature: -

MountingType: -

Package/Case: -

BLA6G1011L-200RG112 | NXP Semiconductors | NHE Electronics

BLA6G1011L-200RG112 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.

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