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    BLF6G10LS-135RN112, NXP Semiconductors, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, POWER LDMOS TRANSISTOR, SOT502 (
    BLF6G10LS-135RN112 Images
    BLF6G10LS-135RN112 Images
    Product Attributes：
  • Part Number: BLF6G10LS-135RN112
  • Manufacturer: NXP Semiconductors
  • Description: POWER LDMOS TRANSISTOR, SOT502 (
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • BLF6G10LS-135RN112 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: BLF6G10LS-135RN112
  • Mfr: NXP USA Inc.
  • Description: POWER LDMOS TRANSISTOR, SOT502 (
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • Package: Bulk
  • Series: *
  • PartStatus: Active
  • TransistorType: -
  • Current-Collector(Ic)(Max): -
  • Voltage-CollectorEmitterBreakdown(Max): -
  • VceSaturation(Max)@IbIc: -
  • Current-CollectorCutoff(Max): -
  • DCCurrentGain(hFE)(Min)@IcVce: -
  • Power-Max: -
  • Frequency-Transition: -
  • OperatingTemperature: -
  • MountingType: -
  • Package/Case: -
  • BLF6G10LS-135RN112 | NXP Semiconductors | NHE Electronics
    • BLF6G10LS-135RN112 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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