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    BUK652R1-30C,127, NXP Semiconductors, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, PFET, 120A I(D), 30V, 0.0035OHM
    BUK652R1-30C,127 Images
    BUK652R1-30C,127 Images
    Product Attributes：
  • Part Number: BUK652R1-30C,127
  • Manufacturer: NXP Semiconductors
  • Description: PFET, 120A I(D), 30V, 0.0035OHM
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BUK652R1-30C,127 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: BUK652R1-30C,127
  • Mfr: NXP USA Inc.
  • Description: PFET, 120A I(D), 30V, 0.0035OHM
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: 262
  • Series: Tube
  • PartStatus: TrenchMOS™
  • FETType: Active
  • Technology: N-Channel
  • DraintoSourceVoltage(Vdss): MOSFET (Metal Oxide)
  • Current-ContinuousDrain(Id)@25°C: 30 V
  • DriveVoltage(MaxRdsOnMinRdsOn): 120A (Tc)
  • RdsOn(Max)@IdVgs: 4.5V, 10V
  • Vgs(th)(Max)@Id: 2.4mOhm @ 25A, 10V
  • GateCharge(Qg)(Max)@Vgs: 2.8V @ 1mA
  • Vgs(Max): 168 nC @ 10 V
  • InputCapacitance(Ciss)(Max)@Vds: ±16V
  • FETFeature: 10.918 pF @ 25 V
  • PowerDissipation(Max): -
  • OperatingTemperature: 263W (Tc)
  • MountingType: -55°C ~ 175°C (TJ)
  • SupplierDevicePackage: Through Hole
  • BUK652R1-30C,127 | NXP Semiconductors | NHE Electronics
    • BUK652R1-30C,127 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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