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    BUK9E1R6-30E,127, NXP Semiconductors, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 120A I2PAK
    BUK9E1R6-30E,127 Images
    BUK9E1R6-30E,127 Images
    Product Attributes：
  • Part Number: BUK9E1R6-30E,127
  • Manufacturer: NXP Semiconductors
  • Description: MOSFET N-CH 30V 120A I2PAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • BUK9E1R6-30E,127 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: BUK9E1R6-30E,127
  • Mfr: NXP USA Inc.
  • Description: MOSFET N-CH 30V 120A I2PAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: TrenchMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 120A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 5V, 10V
  • RdsOn(Max)@IdVgs: 1.4mOhm @ 25A, 10V
  • Vgs(th)(Max)@Id: 2.1V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 113 nC @ 5 V
  • Vgs(Max): ±10V
  • InputCapacitance(Ciss)(Max)@Vds: 16150 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 349W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: I2PAK
  • BUK9E1R6-30E,127 | NXP Semiconductors | NHE Electronics
    • BUK9E1R6-30E,127 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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