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PDTD113ES,126, NXP Semiconductors, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 500MW TO92-3
Product Attributes：
Part Number: PDTD113ES,126
Manufacturer: NXP Semiconductors
Description: TRANS PREBIAS NPN 500MW TO92-3
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTD113ES,126 Datasheet (PDF)
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Product Specifications：
MfrPart.: PDTD113ES,126Mfr: NXP USA Inc.Description: TRANS PREBIAS NPN 500MW TO92-3Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-BiasedPackage: Tape & Box (TB)Series: -PartStatus: ObsoleteTransistorType: NPN - Pre-BiasedCurrent-Collector(Ic)(Max): 500 mAVoltage-CollectorEmitterBreakdown(Max): 50 VResistor-Base(R1): 1 kOhmsResistor-EmitterBase(R2): 1 kOhmsDCCurrentGain(hFE)(Min)@IcVce: 33 @ 50mA, 5VVceSaturation(Max)@IbIc: 300mV @ 2.5mA, 50mACurrent-CollectorCutoff(Max): 500nAFrequency-Transition: -Power-Max: 500 mWMountingType: Through HolePackage/Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)PDTD113ES,126 | NXP Semiconductors | NHE Electronics
PDTD113ES,126 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
