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    PDTD113ZS,126, NXP Semiconductors, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 500MW TO92-3
    PDTD113ZS,126 Images
    PDTD113ZS,126 Images
    Product Attributes：
  • Part Number: PDTD113ZS,126
  • Manufacturer: NXP Semiconductors
  • Description: TRANS PREBIAS NPN 500MW TO92-3
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
  • PDTD113ZS,126 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: PDTD113ZS,126
  • Mfr: NXP USA Inc.
  • Description: TRANS PREBIAS NPN 500MW TO92-3
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
  • Package: Tape & Box (TB)
  • Series: -
  • PartStatus: Obsolete
  • TransistorType: NPN - Pre-Biased
  • Current-Collector(Ic)(Max): 500 mA
  • Voltage-CollectorEmitterBreakdown(Max): 50 V
  • Resistor-Base(R1): 1 kOhms
  • Resistor-EmitterBase(R2): 10 kOhms
  • DCCurrentGain(hFE)(Min)@IcVce: 70 @ 50mA, 5V
  • VceSaturation(Max)@IbIc: 300mV @ 2.5mA, 50mA
  • Current-CollectorCutoff(Max): 500nA
  • Frequency-Transition: -
  • Power-Max: 500 mW
  • MountingType: Through Hole
  • Package/Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • PDTD113ZS,126 | NXP Semiconductors | NHE Electronics
    • PDTD113ZS,126 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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