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PHD18NQ10T,118, NXP Semiconductors, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 18A DPAK
PHD18NQ10T,118 Images
PHD18NQ10T,118 Images
Product Attributes:
  • Part Number: PHD18NQ10T,118
  • Manufacturer: NXP Semiconductors
  • Description: MOSFET N-CH 100V 18A DPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • PHD18NQ10T,118 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: PHD18NQ10T,118
  • Mfr: NXP USA Inc.
  • Description: MOSFET N-CH 100V 18A DPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: TrenchMOS™
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 18A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 90mOhm @ 9A, 10V
  • Vgs(th)(Max)@Id: 4V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 21 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 633 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 79W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: DPAK
  • PHD18NQ10T,118 | NXP Semiconductors | NHE Electronics
  • PHD18NQ10T,118 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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