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PHE13009/DG,127, NXP Semiconductors, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, NOW WEEN - PHE13009 - POWER BIPO
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Product Specifications:
MfrPart.: PHE13009/DG,127Mfr: NXP USA Inc.Description: NOW WEEN - PHE13009 - POWER BIPOProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: -PartStatus: ActiveTransistorType: NPNCurrent-Collector(Ic)(Max): 12 AVoltage-CollectorEmitterBreakdown(Max): 400 VVceSaturation(Max)@IbIc: 2V @ 1.6A, 8ACurrent-CollectorCutoff(Max): 100µADCCurrentGain(hFE)(Min)@IcVce: 8 @ 5A, 5VPower-Max: 80 WFrequency-Transition: -OperatingTemperature: 150°C (TJ)MountingType: Through HolePackage/Case: TO-220-3PHE13009/DG,127 | NXP Semiconductors | NHE Electronics
PHE13009/DG,127 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.