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    PSMN1R6-30PL,127, NXP Semiconductors, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, POWER FIELD-EFFECT TRANSISTOR, 1
    PSMN1R6-30PL,127 Images
    PSMN1R6-30PL,127 Images
    Product Attributes：
  • Part Number: PSMN1R6-30PL,127
  • Manufacturer: NXP Semiconductors
  • Description: POWER FIELD-EFFECT TRANSISTOR, 1
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • PSMN1R6-30PL,127 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: PSMN1R6-30PL,127
  • Mfr: NXP USA Inc.
  • Description: POWER FIELD-EFFECT TRANSISTOR, 1
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 100A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 1.7mOhm @ 25A, 10V
  • Vgs(th)(Max)@Id: 2.15V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 212 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 12.493 pF @ 12 V
  • FETFeature: -
  • PowerDissipation(Max): 306W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: TO-220AB
  • PSMN1R6-30PL,127 | NXP Semiconductors | NHE Electronics
    • PSMN1R6-30PL,127 were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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