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    PSMN7R8-120ESQ, NXP Semiconductors, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, POWER FIELD-EFFECT TRANSISTOR, 7
    PSMN7R8-120ESQ Images
    PSMN7R8-120ESQ Images
    Product Attributes：
  • Part Number: PSMN7R8-120ESQ
  • Manufacturer: NXP Semiconductors
  • Description: POWER FIELD-EFFECT TRANSISTOR, 7
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • PSMN7R8-120ESQ Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: PSMN7R8-120ESQ
  • Mfr: NXP USA Inc.
  • Description: POWER FIELD-EFFECT TRANSISTOR, 7
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 120 V
  • Current-ContinuousDrain(Id)@25°C: 70A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 7.9mOhm @ 25A, 10V
  • Vgs(th)(Max)@Id: 4V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 167 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 9.473 pF @ 60 V
  • FETFeature: -
  • PowerDissipation(Max): 349W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: I2PAK
  • PSMN7R8-120ESQ | NXP Semiconductors | NHE Electronics
    • PSMN7R8-120ESQ were obtained directly from authorized NXP Semiconductors distributors and other trusted sources throughout the world.
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