H5N2521FN-E#T2 | Renesas Electronics

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H5N2521FN-E#T2, Renesas Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, POWER FIELD-EFFECT TRANSISTOR

H5N2521FN-E#T2 Images

Product Attributes：

Part Number: H5N2521FN-E#T2

Manufacturer: Renesas Electronics

Description: POWER FIELD-EFFECT TRANSISTOR

Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single

H5N2521FN-E#T2 Datasheet (PDF)

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Product Specifications：

MfrPart.: H5N2521FN-E#T2

Mfr: Renesas Electronics America Inc

Description: POWER FIELD-EFFECT TRANSISTOR

Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single

Package: Bulk

Series: *

PartStatus: Active

TransistorType: -

Current-Collector(Ic)(Max): -

Voltage-CollectorEmitterBreakdown(Max): -

VceSaturation(Max)@IbIc: -

Current-CollectorCutoff(Max): -

DCCurrentGain(hFE)(Min)@IcVce: -

Power-Max: -

Frequency-Transition: -

OperatingTemperature: -

MountingType: -

Package/Case: -

H5N2521FN-E#T2 | Renesas Electronics | NHE Electronics

H5N2521FN-E#T2 were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.

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