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    HSG1002VE-TL-E, Renesas Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, RF 0.035A C BAND GERMANIUM NPN
    HSG1002VE-TL-E Images
    HSG1002VE-TL-E Images
    Product Attributes：
  • Part Number: HSG1002VE-TL-E
  • Manufacturer: Renesas Electronics
  • Description: RF 0.035A C BAND GERMANIUM NPN
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • HSG1002VE-TL-E Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: HSG1002VE-TL-E
  • Mfr: Renesas Electronics America Inc
  • Description: RF 0.035A C BAND GERMANIUM NPN
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN
  • Voltage-CollectorEmitterBreakdown(Max): 3.5V
  • Frequency-Transition: 38GHz
  • NoiseFigure(dBTyp@f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
  • Gain: 8dB ~ 19.5dB
  • Power-Max: 200mW
  • DCCurrentGain(hFE)(Min)@IcVce: 100 @ 5mA, 2V
  • Current-Collector(Ic)(Max): 35mA
  • OperatingTemperature: -
  • MountingType: Surface Mount
  • Package/Case: 4-SMD, Gull Wing
  • HSG1002VE-TL-E | Renesas Electronics | NHE Electronics
    • HSG1002VE-TL-E were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.
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