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    NP100P06PDG-E1-AY, Renesas Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 60V 100A TO263
    NP100P06PDG-E1-AY Images
    NP100P06PDG-E1-AY Images
    Product Attributes：
  • Part Number: NP100P06PDG-E1-AY
  • Manufacturer: Renesas Electronics
  • Description: MOSFET P-CH 60V 100A TO263
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • NP100P06PDG-E1-AY Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: NP100P06PDG-E1-AY
  • Mfr: Renesas Electronics America Inc
  • Description: MOSFET P-CH 60V 100A TO263
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 60 V
  • Current-ContinuousDrain(Id)@25°C: 100A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 6mOhm @ 50A, 10V
  • Vgs(th)(Max)@Id: 2.5V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 300 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 15000 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 1.8W (Ta), 200W (Tc)
  • OperatingTemperature: 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: TO-263
  • NP100P06PDG-E1-AY | Renesas Electronics | NHE Electronics
    • NP100P06PDG-E1-AY were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.
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