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    RJK03E0DNS-00#J5, Renesas Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, POWER FIELD-EFFECT TRANSISTOR
    RJK03E0DNS-00#J5 Images
    RJK03E0DNS-00#J5 Images
    Product Attributes：
  • Part Number: RJK03E0DNS-00#J5
  • Manufacturer: Renesas Electronics
  • Description: POWER FIELD-EFFECT TRANSISTOR
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • RJK03E0DNS-00#J5 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: RJK03E0DNS-00#J5
  • Mfr: Renesas Electronics America Inc
  • Description: POWER FIELD-EFFECT TRANSISTOR
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 30 V
  • Current-ContinuousDrain(Id)@25°C: 30A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): -
  • RdsOn(Max)@IdVgs: 5.6mOhm @ 15A, 10V
  • Vgs(th)(Max)@Id: -
  • GateCharge(Qg)(Max)@Vgs: 15.2 nC @ 4.5 V
  • Vgs(Max): -
  • InputCapacitance(Ciss)(Max)@Vds: 3050 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 20W (Tc)
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 8-HWSON (3.3x3.3)
  • RJK03E0DNS-00#J5 | Renesas Electronics | NHE Electronics
    • RJK03E0DNS-00#J5 were obtained directly from authorized Renesas Electronics distributors and other trusted sources throughout the world.
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