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    SCTW100N65G2AG, STMicroelectronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, SICFET N-CH 650V 100A HIP247
    SCTW100N65G2AG Images
    SCTW100N65G2AG Images
    Product Attributes：
  • Part Number: SCTW100N65G2AG
  • Manufacturer: STMicroelectronics
  • Description: SICFET N-CH 650V 100A HIP247
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SCTW100N65G2AG Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SCTW100N65G2AG
  • Mfr: STMicroelectronics
  • Description: SICFET N-CH 650V 100A HIP247
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: Automotive, AEC-Q101
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • DraintoSourceVoltage(Vdss): 650 V
  • Current-ContinuousDrain(Id)@25°C: 100A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 18V
  • RdsOn(Max)@IdVgs: 26mOhm @ 50A, 18V
  • Vgs(th)(Max)@Id: 5V @ 5mA
  • GateCharge(Qg)(Max)@Vgs: 162 nC @ 18 V
  • Vgs(Max): +22V, -10V
  • InputCapacitance(Ciss)(Max)@Vds: 3315 pF @ 520 V
  • FETFeature: -
  • PowerDissipation(Max): 420W (Tc)
  • OperatingTemperature: -55°C ~ 200°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: HiP247™
  • SCTW100N65G2AG | STMicroelectronics | NHE Electronics
    • SCTW100N65G2AG were obtained directly from authorized STMicroelectronics distributors and other trusted sources throughout the world.
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