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    STGB30H65DFB2, STMicroelectronics, Discrete Semiconductor Products~Transistors - IGBTs - Single, TRENCH GATE FIELD-STOP 650 V, 30
    STGB30H65DFB2 Images
    STGB30H65DFB2 Images
    Product Attributes：
  • Part Number: STGB30H65DFB2
  • Manufacturer: STMicroelectronics
  • Description: TRENCH GATE FIELD-STOP 650 V, 30
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • STGB30H65DFB2 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: STGB30H65DFB2
  • Mfr: STMicroelectronics
  • Description: TRENCH GATE FIELD-STOP 650 V, 30
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: HB2
  • PartStatus: Active
  • IGBTType: Trench Field Stop
  • Voltage-CollectorEmitterBreakdown(Max): 650 V
  • Current-Collector(Ic)(Max): 50 A
  • Current-CollectorPulsed(Icm): 90 A
  • Vce(on)(Max)@VgeIc: 2.1V @ 15V, 30A
  • Power-Max: 167 W
  • SwitchingEnergy: 270µJ (on), 310µJ (off)
  • InputType: Standard
  • GateCharge: 90 nC
  • Td(on/off)@25°C: 18.4ns/71ns
  • TestCondition: 400V, 30A, 6.8Ohm, 15V
  • ReverseRecoveryTime(trr): 115 ns
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
  • STGB30H65DFB2 | STMicroelectronics | NHE Electronics
    • STGB30H65DFB2 were obtained directly from authorized STMicroelectronics distributors and other trusted sources throughout the world.
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