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STGF20H65DFB2, STMicroelectronics, Discrete Semiconductor Products~Transistors - IGBTs - Single, TRENCH GATE FIELD-STOP 650 V, 20
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Product Specifications:
MfrPart.: STGF20H65DFB2Mfr: STMicroelectronicsDescription: TRENCH GATE FIELD-STOP 650 V, 20Product Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: HB2PartStatus: ActiveIGBTType: Trench Field StopVoltage-CollectorEmitterBreakdown(Max): 650 VCurrent-Collector(Ic)(Max): 40 ACurrent-CollectorPulsed(Icm): 60 AVce(on)(Max)@VgeIc: 2.1V @ 15V, 20APower-Max: 45 WSwitchingEnergy: 265µJ (on), 214µJ (off)InputType: StandardGateCharge: 56 nCTd(on/off)@25°C: 16ns/78.8nsTestCondition: 400V, 20A, 10Ohm, 15VReverseRecoveryTime(trr): 215 nsOperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HolePackage/Case: TO-220-3 Full PackSTGF20H65DFB2 | STMicroelectronics | NHE Electronics
STGF20H65DFB2 were obtained directly from authorized STMicroelectronics distributors and other trusted sources throughout the world.