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K4B2G0846F-BYNB, Samsung Semiconductor, Integrated Circuits (ICs) ~ Memory Ics, IC DRAM FLASH MEMORY IC
K4B2G0846F-BYNB Images
K4B2G0846F-BYNB Images
Product Attributes:
  • Part Number: K4B2G0846F-BYNB
  • Manufacturer: Samsung Semiconductor
  • Description: IC DRAM FLASH MEMORY IC
  • Category: Integrated Circuits (ICs) ~ Memory Ics
  • K4B2G0846F-BYNB Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: K4B2G0846F-BYNB
  • Mfr: SAMSUNG Semiconductor
  • Description: IC DRAM FLASH MEMORY ICs
  • Product Category: Integrated Circuits (ICs) ~ Memory IC
  • Package: -
  • Series: -
  • PartStatus: -
  • MemoryType: Volatile
  • MemoryFormat: DRAM
  • Technology: DRAM - SDRAM - DDR - FLASH
  • MemorySize: -
  • MemoryInterface: -
  • ClockFrequency: -
  • WriteCycleTime-WordPage: -
  • AccessTime: -
  • Voltage-Supply: -
  • OperatingTemperature: -
  • MountingType: Surface Mount
  • Package/Case: -
  • K4B2G0846F-BYNB | Samsung Semiconductor | NHE Electronics
  • K4B2G0846F-BYNB were obtained directly from authorized Samsung Semiconductor distributors and other trusted sources throughout the world.
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