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1N5407G R0G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 800V 3A DO201AD
Product Attributes:
Part Number: 1N5407G R0G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 800V 3A DO201AD
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
1N5407G R0G Datasheet (PDF)
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BRIDGE RECT 1PHASE 1KV 15A TS-6P
TVS DIODE 9.4VWM 15.6VC DO214AA
DIODE, 1A, 800V, AEC-Q101, SOD-1
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TVS DIODE 70.1VWM 113VC DO204AL
DIODE GEN PURP 2A DO214AA
Product Specifications:
Manufacturer Product Number: 1N5407G R0GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 800V 3A DO201ADProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: -Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 800 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 1 V @ 3 ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 5 µA @ 800 VCapacitance @ Vr, F: 25pF @ 4V, 1MHzMounting Type: Through HolePackage / Case: DO-201AD, AxialOperating Temperature - Junction: -55°C ~ 150°C1N5407G R0G | Taiwan Semiconductor | NHE Electronics
1N5407G R0G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.